Active pixel sensor with a diagonal active area

ABSTRACT

An imaging device formed as a CMOS semiconductor integrated circuit having two adjacent pixels in a row connected to a common column line. By having adjacent pixels of a row share column lines, the CMOS imager circuit eliminates half the column lines of a traditional imager allowing the fabrication of a smaller imager. The imaging device also maybe fabricated to have a diagonal active area to facilitate contact of two adjacent pixels with the single column line and allow linear row select lines, reset lines and column lines.

FIELD OF THE INVENTION

The invention relates generally to improved semiconductor imagingdevices and in particular to a silicon imaging device which can befabricated using a standard CMOS process. Particularly, the inventionrelates to CMOS imager having orthogonal row and column lines and aplurality of pixel sensors each having a diagonal active area. Theinvention further relates to a CMOS imager having two adjacent pixels inthe same row of a pixel array connected to a shared column line.

DESCRIPTION OF THE RELATED ART

There are a number of different types of semiconductor-based imagers,including charge coupled devices (CCDs), photodiode arrays, chargeinjection devices and hybrid focal plane arrays. CCDs are often employedfor image acquisition and enjoy a number of advantages which makes itthe incumbent technology, particularly for small size imagingapplications. CCDs are also capable of large formats with small pixelsize and they employ low noise charge domain processing techniques.However, CCD imagers also suffer from a number of disadvantages. Forexample, they are susceptible to radiation damage, they exhibitdestructive read out over time, they require good light shielding toavoid image smear and they have a high power dissipation for largearrays. Additionally, while offering high performance, CCD arrays aredifficult to integrate with CMOS processing in part due to a differentprocessing technology and to their high capacitances, complicating theintegration of on-chip drive and signal processing electronics with theCCD array. While there has been some attempts to integrate on-chipsignal processing with the CCD array, these attempts have not beenentirely successful. CCDs also must transfer an image by line chargetransfers from pixel to pixel, requiring that the entire array be readout into a memory before individual pixels or groups of pixels can beaccessed and processed. This takes time. CCDs may also suffer fromincomplete charge transfer from pixel to pixel during charge transferwhich also results in image smear.

Because of the inherent limitations in CCD technology, there is aninterest in CMOS imagers for possible use as low cost imaging devices. Afully compatible CMOS sensor technology enabling a higher level ofintegration of an image array with associated processing circuits wouldbe beneficial to many digital applications such as, for example, incameras, scanners, machine vision systems, vehicle navigation systems,video telephones, computer input devices, surveillance systems, autofocus systems, star trackers, motion detection systems, imagestabilization systems and data compression systems for high-definitiontelevision.

The advantages of CMOS imagers over CCD imagers are that CMOS imagershave a low voltage operation and low power consumption; CMOS imagers arecompatible with integrated on-chip electronics (control logic andtiming, image processing, and signal conditioning such as A/Dconversion); CMOS imagers allow random access to the image data; andCMOS imagers have lower fabrication costs as compared with theconventional CCD since standard CMOS processing techniques can be used.Additionally, low power consumption is achieved for CMOS imagers becauseonly one row of pixels at a time needs to be active during the readoutand there is no charge transfer (and associated switching) from pixel topixel during image acquisition. On-chip integration of electronics isparticularly advantageous because of the potential to perform manysignal conditioning functions in the digital domain (versus analogsignal processing) as well as to achieve a reduction in system size andcost.

A CMOS imager circuit includes a focal plane array of pixel cells, eachone of the cells including either a photogate, photoconductor or aphotodiode overlying a substrate for accumulating photo-generated chargein the underlying portion of the substrate. A readout circuit isconnected to each pixel cell and includes at least an output fieldeffect transistor formed in the substrate and a charge transfer sectionformed on the substrate adjacent the photogate, photoconductor orphotodiode having a sensing node, typically a floating diffusion node,connected to the gate of an output transistor. The imager may include atleast one electronic device such as a transistor for transferring chargefrom the underlying portion of the substrate to the floating diffusionnode and one device, also typically a transistor, for resetting the nodeto a predetermined charge level prior to charge transference.

In a CMOS imager, the active elements of a pixel cell perform thenecessary functions of: (1) photon to charge conversion; (2)accumulation of image charge; (3) transfer of charge to the floatingdiffusion node accompanied by charge amplification; (4) resetting thefloating diffusion node to a known state before the transfer of chargeto it; (5) selection of a pixel for readout; and (6) output andamplification of a signal representing pixel charge. Photo charge may beamplified when it moves from the initial charge accumulation region tothe floating diffusion node. The charge at the floating diffusion nodeis typically converted to a pixel output voltage by a source followeroutput transistor. The photosensitive element of a CMOS imager pixel istypically either a depleted p-n junction photodiode or a field induceddepletion region beneath a photogate. For photodiodes, image lag can beeliminated by completely depleting the photodiode upon readout.

CMOS imagers of the type discussed above are generally known asdiscussed, for example, in Nixon et al., “256×256 CMOS Active PixelSensor Camera-on-a-Chip,” IEEE Journal of Solid-State Circuits, Vol.31(12) pp. 2046-2050, 1996; Mendis et al, “CMOS Active Pixel ImageSensors,” IEEE Transactions on Electron Devices, Vol. 41(3) pp. 452-453,1994 as well as U.S. Pat. No. 5,708,263 and U.S. Pat. No. 5,471,515,which are herein incorporated by reference.

To provide context for the invention, an exemplary CMOS imaging circuitis described below with reference to FIG. 1. The circuit describedbelow, for example, includes a photogate for accumulatingphoto-generated charge in an underlying portion of the substrate. Itshould be understood that the CMOS imager may include a photodiode orother image to charge converting device, in lieu of a photogate, as theinitial accumulator for photo-generated charge.

Reference is now made to FIG. 1 which shows a simplified circuit for apixel of an exemplary CMOS imager using a photogate and having a pixelphotodetector circuit 14 and a readout circuit 60. It should beunderstood that while FIG. 1 shows the circuitry for operation of asingle pixel, that in practical use there will be an MxN array of pixelsarranged in rows and columns with the pixels of the array accessed usingrow and column select circuitry, as described in more detail below.

The photodetector circuit 14 is shown in part as a cross-sectional viewof a semiconductor substrate 16 typically a p-type silicon, having asurface well of p-type material 20. An optional layer 18 of p-typematerial may be used if desired, but is not required. Substrate 16 maybe formed of, for example, Si, SiGe, Ge, and GaAs. Typically the entiresubstrate 16 is p-type doped silicon substrate and may contain a surfacep-well 20 (with layer 18 omitted), but many other options are possible,such as, for example p on p-substrates, p on p+ substrates, p-wells inn-type substrates or the like. The terms wafer or substrate used in thedescription includes any semiconductor-based structure having an exposedsurface in which to form the circuit structure used in the invention.Wafer and substrate are to be understood as including,silicon-on-insulator (SOI) technology, silicon-on-sapphire (SOS)technology, doped and undoped semiconductors, epitaxial layers ofsilicon supported by a base semiconductor foundation, and othersemiconductor structures. Furthermore, when reference is made to a waferor substrate in the following description, previous process steps mayhave been utilized to form regions/junctions in the base semiconductorstructure or foundation.

An insulating layer 22 such as, for example, silicon dioxide is formedon the upper surface of p-well 20. The p-type layer may be a p-wellformed in substrate 16. A photbgate 24 thin enough to pass radiantenergy or of a material which passes radiant energy is formed on theinsulating layer 22. The photogate 24 receives an applied control signalPG which causes the initial accumulation of pixel charges in n+ region26. The n+ type region 26, adjacent one side of photogate 24, is formedin the upper surface of p-well 20. A transfer gate 28 is formed oninsulating layer 22 between n+ type region 26 and a second n+ typeregion 30 formed in p-well 20. The n+ regions 26 and 30 and transfergate 28 form a charge transfer transistor 29 which is controlled by atransfer signal TX. The n+ region 30 is typically called a floatingdiffusion region. It is also a node for passing charge accumulatedthereat to the gate of a source follower transistor 36 described below.A reset gate 32 is also formed on insulating layer 22 adjacent andbetween n+ type region 30 and another n+ region 34 which is also formedin p-well 20. The reset gate 32 and n+ regions 30 and 34 form a resettransistor 31 which is controlled by a reset signal RST. The n+ typeregion 34 is coupled to voltage source VDD, e.g., 5 volts. The transferand reset transistors 29, 31 are n-channel transistors as described inthis implementation of a CMOS imager circuit in a p-well. It should beunderstood that it is possible to implement a CMOS imager in an n-wellin which case each of the transistors would be p-channel transistors. Itshould also be noted that while FIG. 1 shows the use of a transfer gate28 and associated transistor 29, this structure provides advantages, butis not required.

Photodetector circuit 14 also includes two additional n-channeltransistors, source follower transistor 36 and row select transistor 38.Transistors 36, 38 are coupled in series, source to drain, with thesource of transistor 36 also coupled over lead 40 to voltage source VDDand the drain of transistor 38 coupled to a lead 42. The drain of rowselect transistor 38 is connected via conductor 42 to the drains ofsimilar row select transistors for other pixels in a given pixel row. Aload transistor 39 is also coupled between the drain of transistor 38and a voltage source VSS, e.g. 0 volts. Transistor 39 is kept on by asignal VLN applied to its gate.

The imager includes a readout circuit 60 which includes a signal sampleand hold (S/H) circuit including a S/H n-channel field effect transistor62 and a signal storage capacitor 64 connected to the source followertransistor 36 through row transistor 38. The other side of the capacitor64 is connected to a source voltage VSS. The upper side of the capacitor64 is also connected to the gate of a p-channel output transistor 66.The drain of the output transistor 66 is connected through a columnselect transistor 68 to a signal sample output node VOUTS and through aload transistor 70 to the voltage supply VDD. A signal called “signalsample and hold” (SHS) briefly turns on the S/H transistor 62 after thecharge accumulated beneath the photogate electrode 24 has beentransferred to the floating diffusion node 30 and from there to thesource follower transistor 36 and through row select transistor 38 toline 42, so that the capacitor 64 stores a voltage representing theamount of charge previously accumulated beneath the photogate electrode24.

The readout circuit 60 also includes a reset sample and hold (S/H)circuit including a S/H transistor 72 and a signal storage capacitor 74connected through the S/H transistor 72 and through the row selecttransistor 38 to the source of the source follower transistor 36. Theother side of the capacitor 74 is connected to the source voltage VSS.The upper side of the capacitor 74 is also connected to the gate of ap-channel output transistor 76. The drain of the output transistor 76 isconnected through a p-channel column select transistor 78 to a resetsample output node VOUTR and through a load transistor 80 to the supplyvoltage VDD. A signal called “reset sample and hold” (SHR) briefly turnson the S/H transistor 72 immediately after the reset signal RST hascaused reset transistor 31 to turn on and reset the potential of thefloating diffusion node 30, so that the capacitor 74 stores the voltageto which the floating diffusion node 30 has been reset.

The readout circuit 60 provides correlated sampling of the potential ofthe floating diffusion node 30, first of the reset charge applied tonode 30 by reset transistor 31 and then of the stored charge from thephotogate 24. The two samplings of the diffusion node 30 charges producerespective output voltages VOUTR and VOUTS of the readout circuit 60.These voltages are then subtracted (VOUTS-VOUTR) by subtractor 82 toprovide an output signal terminal 81 which is an image signalindependent of pixel to pixel variations caused by fabricationvariations in the reset voltage transistor 31 which might cause pixel topixel variations in the output signal.

FIG. 2 illustrates a block diagram for a CMOS imager having a pixelarray 200 with each pixel cell being constructed in the manner shown byelement 14 of FIG. 1. Pixel array 200 comprises a plurality of pixelsarranged in a predetermined number of columns and rows. The pixels ofeach row in array 200 are all turned on at the same time by a row selectline, e.g., line 86, and the pixels of each column are selectivelyoutput by a column select line, e.g., line 42. A plurality of rows andcolumn lines are provided for the entire array 200. The row lines areselectively activated by the row driver 210 in response to row addressdecoder 220 and the column select lines are selectively activated by thecolumn driver 260 in response to column address decoder 270. Thus, a rowand column address is provided for each pixel. The CMOS imager isoperated by the control circuit 250 which controls address decoders 220,270 for selecting the appropriate row and column lines for pixelreadout, and row and column driver circuitry 210, 260 which applydriving voltage to the drive transistors of the selected row and columnlines.

FIG. 3 shows a simplified timing diagram for the signals used totransfer charge out of photodetector circuit 14 of the FIG. 1 CMOSimager. The photogate signal PG is nominally set to 5V and pulsed from5V to 0V during integration. The reset signal RST is nominally set at2.5V. As can be seen from the figure, the process is begun at time t₀ bybriefly pulsing reset voltage RST to 5V. The RST voltage, which isapplied to the gate 32 of reset transistor 31, causes transistor 31 toturn on and the floating diffusion node 30 to charge to the VDD voltagepresent at n+ region 34 (less the voltage drop Vth of transistor 31).This resets the floating diffusion node 30 to a predetermined voltage(VDD-Vth). The charge on floating diffusion node 30 is applied to thegate of the source follower transistor 36 to control the current passingthrough transistor 38, which has been turned on by a row select (ROW)signal, and load transistor 39. This current is translated into avoltage on line 42 which is next sampled by providing a SHR signal tothe S/H transistor 72 which charges capacitor 74 with the sourcefollower transistor output voltage on line 42 representing the resetcharge present at floating diffusion node 30. The PG signal is nextpulsed to 0 volts, causing charge to be collected in n+ region 26. Atransfer gate voltage TX, similar to the reset pulse RST, is thenapplied to transfer gate 28 of transistor 29 to cause the charge in n+region 26 to transfer to floating diffusion node 30. It should beunderstood that for the case of a photogate, the transfer gate voltageTX may be pulsed or held to a fixed DC potential. For the implementationof a photodiode with a transfer gate, the transfer gate voltage TX mustbe pulsed. The new output voltage on line 42 generated by sourcefollower transistor 36 current is then sampled onto capacitor 64 byenabling the sample and hold switch 62 by signal SHS. The column selectsignal is next applied to transistors 68 and 70 and the respectivecharges stored in capacitors 64 and 74 are subtracted in subtractor 82to provide a pixel output signal at terminal 81. It should also be notedthat CMOS imagers may dispense with the transfer gate 28 and associatedtransistor 29, or retain these structures while biasing the transfertransistor 29 to an always “on” state.

The operation of the charge collection of the CMOS imager is known inthe art and is described in several publications such as Mendis et al.,“Progress in CMOS Active Pixel Image Sensors,” SPIE Vol. 2172, pp. 19-291994; Mendis et al., “CMOS Active Pixel Image Sensors for HighlyIntegrated Imaging Systems,” IEEE Journal of Solid State Circuits, Vol.32(2), 1997; and Eric R, Fossum, “CMOS Image Sensors: Electronic Cameraon a Chip,” IEDM Vol. 95 pages 17-25 (1995) as well as otherpublications. These references are incorporated herein by reference.

Prior CMOS imagers had a respective column line attached to every pixelin the row. By having a column line for each pixel in the row, the rowselect (ROW), reset (RST) and transfer (TX) lines of the prior imagershad to be routed in a manner where such lines are not straight and, infact, each have substantial perpendicular conductive segments 811, 816,851 respectively, as shown in FIG. 7. The large number of perpendicularconductor segments makes fabrication of a pixel array complicated and itis difficult to maintain the required spacing for the numerousconductors and their perpendicular segments. Additionally, CMOS imagershaving such a considerable number of non-linear contact paths results inincreased materials costs and a large pixel size. It would be desirableto shrink pixel size if possible to reduce the size of the conductors inorder to increase the size of the photosensitive area “active area” of apixel.

SUMMARY OF THE INVENTION

The present invention provides an imaging device formed as a CMOSintegrated circuit using a standard CMOS process fabricated such thattwo adjacent pixels in a selected row share a single column line. Bysharing column lines, the pixel array can be fabricated using fewerconductors which permits the cells to have larger photosensitive areas.Additionally, by having two adjacent pixels sharing a single column linethe imager will be more efficiently fabricated since the design of thepresent invention eliminates half of the usually required metal columnline contacts.

The present invention seeks to reduce the number of required conductorshaving perpendicular segments while providing orthogonal row and columnconductors for the pixel array. In one implementation of the inventionthe shared column lines and straight contact lines are achieved byformulating a diagonal active area for each pixel. The fabrication ofthe diagonal active area allows the row select lines and column selectand reset lines to be linear in the circuit (when viewed from above).The diagonal active area implementation of the present invention alsoallows displacement of the metal Vout lines from the VDD contacts sothat the Vout lines can be straight.

The above and other advantages and features of the invention will bemore clearly understood from the following detailed description which isprovided in connection with the accompanying drawings.

BRIEF DESCRIPTION OF THE DRAWINGS

The foregoing and other advantages and features of the invention willbecome more apparent from the detailed description of the preferredembodiments of the invention given below with reference to theaccompanying drawings in which:

FIG. 1 is a representative circuit of a CMOS imager.

FIG. 2 is a block diagram of a CMOS active pixel sensor chip.

FIG. 3 is a representative timing diagram for the CMOS imager.

FIG. 4 shows a pixel layout showing a 2×3 pixel layout according to theprior art.

FIG. 5 shows a pixel layout showing a 2×3 pixel layout according to oneembodiment of the present invention.

FIG. 6 is a representative layout of a CMOS array according to thepresent invention showing two rows of pixels sharing a single columnline.

FIG. 7 is a layout illustrating a prior CMOS imager.

FIG. 8 is a layout illustrating a CMOS imager of the present inventionhaving a diagonal active area.

FIG. 9 is an illustration of a computer system having a CMOS imageraccording to the present invention.

DETAILED DESCRIPTION OF PREFERRED EMBODIMENTS

The present invention will now be described with reference to thefigures. Referring now to FIG. 4. This figure shows a 2×3 pixel layoutaccording to the prior art. Pixels 301, 302 and 303 contact column line310 and row lines 312, 314 and 316. Pixels 304, 305 and 306 contactcolumn line 311 and row lines 312, 314 and 316.

FIG. 5 illustrates a similar 2×3 pixel layout according to oneembodiment of the present invention. As illustrated in the figure,pixels 401, 402, 403, 404, 405 and 406 all connect with column line 410.Pixel 401 connects with even row line 412. Pixel 402 connects with evenrow line 414. Pixel 403 connects with even row line 416. Pixel 404connects with odd row line 411. Pixel 405 connects with odd row line413. Pixel 406 connects with odd row line 415. As can be seen from FIG.5, all six pixels connects with a single column line 410. Row lines(411, 412, 413, 414, 415, 416) are conventionally formed of dopedpolysilicon, metals; such as tungsten, titanium, titanium nitride; andrefractory metal silicides; such as tungsten silicide, titaniumsilicide, tantalum silicide or cobalt silicide and mixtures thereof. Thecolumn line (410) is formed of a metal layer. By eliminating half of thesensor array metal layer column lines, as shown in FIG. 6, the overallsize of the CMOS imager device can be reduced and/or the size of thephotosensitive area can be increased.

FIG. 6 shows a plurality of pixels (501, 502, 503, 504, 505, 506, 507,508) located in an array 500. It should be understood that the labeledpixels of FIG. 6 generally function similar to the pixels previouslydescribed with respect to FIG. 1. Pixels 501, 502, 504 and 505 areconnected by a shared column line 515. Pixels 503, 506, 507 and 508, forexample, are connected to a second shared column line 517. Althoughpixels 501, 502, 504 and 505 are addressed using a single column line515, pixel 501 is addressed by odd row line 522, and pixel 502 isaddressed by even row line 524, pixel 504 is addressed by odd row line526 and pixel 505 is addressed by even row line 528. Thus, even thoughadjacent row pixels, e.g., 501, 502 share a single column line, e.g.,515 their addresses are not identical.

When the active area is fabricated to be generally linear, the prior artimagers needed to fabricate the output, VDD, reset, and row select linesin the device in a non-linear configuration with conductors havingperpendicular segments, as shown in FIG. 7. As can be seen from thefigure, the pixel cell includes an active area 802 having a generalL-shape. Every pixel cell includes a single column line 805 where thevoltage of the pixel cell is output to the readout circuit via metalconnection 840. As can be seen from the figure, transfer line 850 androw line 810 each have a perpendicular segments, 851 and 811respectively, in order to effectively connect and operate the pixelcell. The pixel cell also has a reset line 830 which has twoperpendicular segments 816. The cell is connected to VDD by line 820.

FIG. 8 is a layout in accordance with the invention illustrating a CMOSimager having a diagonal active area component 643, 644 and linear andorthogonal row 610, 612 and column 605 lines and linear reset lines 614,616 which parallel the row lines. By fabricating an active area 601, 602having a diagonal component 643, 644, the present invention allows thefabrication of straight reset, row select, VDD and Vout column lines.The diagonal fabrication of the active area also facilitates theconnection of two cells to a single shared column line, which reducesthe number of column contacts over the prior arrays.

As illustrated in FIG. 8, a straight column line 605 connects two CMOSimager cells 603, 604 at connection point 640. The first cell 603 has anactive area (sensor area) 602 which includes a diagonal component 643.The row select transistor of the first cell 603 is addressed by even rowselect line 610. The cell reset 603 is activated by reset line 614. Thegate of the source follower transistor is connected by line 630. Thecell 603 is connected to VDD by contact 620.

The second cell 604 has an active area (sensor area) 601 which includesa diagonal component 644. The row select transistor of the second cell604 is addressed by odd row select line 612. The reset transistor ofcell 604 is activated by reset line 616. The gate of the source followertransistor is connected to logic by line 632. The cell 604 is connectedto VDD by contact 622. As illustrated in the figure, the row selectlines 610, 612 and the reset lines 614, 616 are patterned to bestraight. Additionally, the column line 605 is also straight and the twocells 603, 604 are connected to the single column line 605. The activeareas 601, 602 when top viewed as in FIG. 8 for a general S-shapedconfiguration.

The use of a diagonal active area for the pixel allows better contactbetween the pixel and the associated circuit logic because the chance offorming improper contacts during fabrication is reduced with a straightline. Additionally, the diagonal active area displaces the column linecontact from the VDD contacts so that the metal lines can be straight.The diagonal active area also facilitates the sharing of a single columnline by adjacent row pixels.

A typical processor based system which includes a CMOS imager deviceaccording to the present invention is illustrated generally at 700 inFIG. 9. A processor based system is exemplary of a system having digitalcircuits which could include CMOS imager devices. Without beinglimiting, such a system could include a computer system, camera system,scanner, machine vision system, vehicle navigation system, videotelephone system, surveillance system, auto focus system, star trackersystem, motion detection system, image stabilization system and datacompression system for high-definition television, all of which canutilize the present invention.

A processor system, such as a computer system, for example generallycomprises a central processing unit (CPU) 744 e.g., a microprocessor,that communicates with an input/output (I/O) device 446 over a bus 752.The CMOS imager 742 also communicates with the system over bus 752. TheCMOS imager 742 may be combined with a processor, such as a CPU 744, adigital signal processor or microprocessor, in a single integratedcircuit.

The computer system 700 also includes random access memory (RAM) 748,and, in the case of a computer system may include peripheral devicessuch as a floppy disk drive 754 and a compact disk (CD) ROM drive 756which also communicate with CPU 744 over the bus 752. CMOS imager 742 ispreferably constructed as an integrated circuit which includes anintegrated circuit as previously described with respect to FIGS. 5-6 and8.

It should again be noted that although the invention has been describedwith specific reference to specific CMOS circuits having a single columnline and even and odd row lines, the invention has broader applicabilityand may be used in any imaging apparatus. For example, the invention isnot limited to the diagonal active area implementation. Any physicalarrangement of adjacent pixels which allows adjacent multiple cells tocontact a single column line is within the scope of the presentinvention. Similarly, the process described above is but one method ofmany that could be used. Accordingly, the above description andaccompanying drawings are only illustrative of preferred embodimentswhich can achieve the features and advantages of the present invention.It is not intended that the invention be limited to the embodimentsshown and described in detail herein. The invention is only limited bythe scope of the following claims.

What is claimed as new and desired to be protected by Letters Patent ofthe United States is:
 1. An imaging device formed as an integratedcircuit comprising: a photosensitive device for accumulatingphoto-generated charge having a generally diagonally shaped componentcontacting a column output line in an underlying portion of asemiconductor substrate; and a readout circuit comprising at least anoutput transistor; wherein said imaging device is in a row of similarimaging devices in an array and shares said column output line with anadjacent imaging device of the row.
 2. The imaging device according toclaim 1, wherein said photosensitive device is selected from the groupconsisting of a photogate, a photodiode and a photoconductor.
 3. Theimaging device according to claim 1, wherein said photosensitive deviceincludes a photodiode.
 4. The imaging device according to claim 1,wherein said photosensitive device includes a photoconductor.
 5. Theimaging device according to claim 1, further comprising a controllablecharge transfer region having a control terminal, said transfer regionbeing formed in said substrate adjacent said photosensitive area andhaving a node connected to a gate of said output transistor and at leastone charge transfer device for transferring charge from saidphotosensitive area to said node in accordance with a control signalapplied to said control terminal.
 6. The imaging device according toclaim 5, wherein said charge transfer device is a field effecttransistor.
 7. The imaging device according to claim 1, furthercomprising a straight column line formed of a metal layer in anintegrated circuit to address said imaging device.
 8. The imaging deviceaccording to claim 5, further comprising a reset transistor forresetting said node in response to a reset signal.
 9. The imaging deviceaccording to claim 8, wherein said reset transistor is addressed by areset line which is linear in said substrate.
 10. The imaging deviceaccording to claim 9, wherein said reset line is formed of a materialselected from the group consisting of doped polysilicon, metals andrefractory metal silicides.
 11. The imaging device according to claim 9,further comprising a row select transistor responsive to a row selectsignal to activate said imaging device.
 12. The imaging device accordingto claim 11, wherein said row select transistor is addressed by a rowselect line which is linear in said substrate.
 13. The imaging deviceaccording to claim 12, wherein said row select line is formed of amaterial selected from the group consisting of doped polysilicon,metals, refractory metal silicides and mixtures thereof.
 14. A methodfor generating an output signal corresponding to an image focused on asensor array having rows and columns of pixel sensors on a substratewherein two adjacent pixel sensors in a row are connected to a sharedcolumn line, each sensor capable of collecting electrical charge basedon a detected light intensity, the method comprising the steps of:activating a first sensor in a row connected to a shared column line fora first period of time then subsequently activating an adjacent secondsensors sensor in the row connected to said shared column line for asecond period of time; detecting a first voltage at a node of arespective activated sensor; resetting the voltage of the respectivenodes of said activated sensors to a predetermined voltage, wherein saidvoltage is reset by a reset transistor addressed by a reset line whichis linear in said substrate; transferring electrical charges collectedby said activated sensor to said node; detecting a second voltage atsaid node; and generating an output signal over said shared column line.15. The method for generating an output signal according to claim 14,wherein said sensor is selected from the group consisting of aphotogate, a photodiode and a photoconductor.
 16. The method forgenerating an output signal according to claim 14, wherein said node isa floating diffusion node.
 17. The method for generating an outputsignal according to claim 14, wherein said shared column line is formedof a metal layer.
 18. The method for generating an output signalaccording to claim 14, wherein said shared column line is linear in saidsubstrate.
 19. The method for generating an output signal according toclaim 14, wherein said reset transistor is addressed by a reset linewhich is linear in said substrate.
 20. The method for generating anoutput signal according to claim 19, wherein said reset line is formedof a material selected from the group consisting of doped polysilicon,metals, refractory metal suicides and mixtures thereof.
 21. The methodfor generating an output signal according to claim 14, wherein said rowselect transistor is addressed by a row select line which is linear insaid substrate.
 22. The method for generating an output signal accordingto claim 21, wherein said row select line is formed of a materialselected from the group consisting of doped polysilicon, metals,refractory metal silicides and mixtures thereof.
 23. An imaging systemcomprising: a plurality of pixel cells having an active sensor areawhich includes a diagonally shaped component, the cells being arrangedinto an array of rows and columns, each pixel cell being operable togenerate a voltage at a diffusion node corresponding to detected lightintensity by the sensor, wherein two cells in a row share a commoncolumn line for addressing said pixel cell and the pixel cells in therow that share the common column line are alternatively addressed byrespective row select lines; a row select device connected to either anodd row select line or an even row select line respectively; and a rowdecoder having a plurality of control lines connected to the pixelcells, each control line being connected to the cells in contact with arespective column, wherein the row decoder is operable to activate oddcells in said rows and even cells in said rows by said row selectdevice.
 24. The imaging system according to claim 23, furthercomprising: a reset device to reset the voltage of a diffusion nodeformed in the cells; a transfer device to transfer charge from saidpixel cells to said diffusion node; and a plurality of output circuitsrespectively connected to a pixel cell, each output circuit beingoperable to store a voltage signal received from a respective pixel celland to provide a sensor output signal.
 25. The imaging system accordingto claim 23, wherein said pixel cells include a photogate, a photodiodeor a photoconductor in said active area.
 26. The imaging systemaccording to claim 24, wherein the diffusion node is a floatingdiffusion node.
 27. The imaging system according to claim 23, whereinsaid column line addressing two adjacent rows of pixel cells is linearin said substrate.
 28. The imaging device according to claim 27, whereinsaid column line is formed of a metal.
 29. The imaging system accordingto claim 24, wherein said reset device is addressed by a reset linewhich is linear in said substrate.
 30. The imaging system according toclaim 29, wherein said reset line is formed of a material selected fromthe group consisting of doped polysilicon, metals, refractory metalsilicides and mixtures thereof.
 31. The imaging system according toclaim 24, wherein said row select device is addressed by a row selectline which is linear in said substrate.
 32. The imaging system accordingto claim 31, wherein said row select line is formed of a materialselected from the group consisting of doped polysilicon, metals,refractory metal silicides and mixtures thereof.
 33. A CMOS imager arraycomprising: a plurality of CMOS imager pixels for generating an outputsignal from detected light and arranged in rows and columns in an array;a plurality of column lines each connected to at least two adjacentpixels of a row in said array, said column lines being connected tooutput circuitry to output signals generated from detected light; aplurality of odd row select lines orthogonal to said column lines toaddress odd pixels in said rows; a plurality of even row select linesorthogonal to said column lines to address even pixels in said rows;column drivers to address the pixels connected to said column lines; rowdrivers to address the pixels through said odd row lines and said evenrow lines.
 34. The CMOS imager array according to claim 33, wherein saidplurality of CMOS imager pixels have an active area having a diagonallyshaped component.
 35. The CMOS imager array according to claim 33,wherein said column line is linear in said array.
 36. The CMOS imagerarray according to claim 34, wherein said column line is formed of ametal.
 37. The CMOS imager array according to claim 33, wherein said oddrow lines and said even row lines are is linear in said array.
 38. TheCMOS imager array according to claim 36, wherein said odd and even rowselect lines are formed of materials selected from the group consistingof doped polysilicon, metals, refractory metal silicides and mixturesthereof.
 39. A system comprising: (i) a processor; and (ii) a CMOSimaging device coupled to said processor and including: a photosensitivedevice for accumulating photo-generated charge in an underlying portionof a semiconductor substrate, wherein the photosensitive area of saidimaging devices sharing a column line is generally S-shaped; and areadout circuit comprising at least an output transistor; wherein saidimaging device is in a row of similar imaging devices in an array andshares a column output line with an adjacent imaging device of the row.40. The system according to claim 39, wherein said photosensitive deviceselected from the group consisting of a photogate, a photodiode and aphotoconductor.
 41. The system according to claim 39, wherein saidphotosensitive device includes an active area for accumulatingphoto-generated charge having a generally diagonally shaped component.42. The system according to claim 39, further comprising a controllablecharge transfer region having a control terminal, said transfer regionbeing formed in said substrate adjacent said photosensitive area andhaving a node connected to a gate of said output transistor and at leastone charge transfer device for transferring charge from saidphotosensitive area to said node in accordance with a control signalapplied to said control terminal.
 43. The system according to claim 42,wherein said charge transfer device is a field effect transistor. 44.The system according to claim 39, further comprising a straight columnline formed of a metal layer in a substrate to address said imagingdevice.
 45. The system according to claim 42, further comprising a resettransistor for resetting said node in response to a reset signal. 46.The system according to claim 45, wherein said reset transistor isaddressed by a reset line which is linear in said substrate.
 47. Thesystem according to claim 46, wherein said reset line is formed of amaterial selected from the group consisting of doped polysilicon,metals, refractory metal silicides and mixtures thereof.
 48. The systemaccording to claim 46, further comprising a row select transistorresponsive to a row select signal to activate said imaging device. 49.The system according to claim 48, wherein said row select transistor isaddressed by a row select line which is linear in said substrate. 50.The system according to claim 49, wherein said row select line is formedof a material selected from the group consisting of doped polysilicon,metals, refractory metal silicides and mixtures thereof.
 51. The systemaccording to claim 39, wherein said system is a camera system.
 52. Thesystem according to claim 39, wherein said system is a scanner.
 53. Thesystem according to claim 39, wherein said system is a machine visionsystem.
 54. The system according to claim 39, wherein said system is avehicle navigation system.
 55. The system according to claim 39, whereinsaid system is a video telephone system.